ENHANCEMENT OF THE FAR-INFRARED PHOTOCONDUCTIVE RESPONSE IN p-TYPE Ge
- 1 November 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (9) , 360-362
- https://doi.org/10.1063/1.1653434
Abstract
An increase in far‐infrared photoconductivity caused by near‐infrared light has been observed. A number of possible explanations are given for the experimental observations. The potential use of this technique for experiments beyond 100μ is suggested.Keywords
This publication has 3 references indexed in Scilit:
- Two types of far-infrared photoconductivity in antimony-doped germaniumSolid State Communications, 1969
- Spectral Response of the Ge:Ga Photoconductive DetectorApplied Optics, 1968
- FAR-INFRARED PHOTOCONDUCTIVITY IN HIGH-PURITY EPITAXIAL GaAsApplied Physics Letters, 1968