High-Energy Electron Irradiation of Germanium and Tellurium
- 1 August 1959
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 30 (8) , 1235-1238
- https://doi.org/10.1063/1.1735299
Abstract
Tellurium samples in which current flowed parallel to the c axis were irradiated at 78°K with 20-Mev electrons. The conductivity increased linearly with a slope of 1.0×10−14 (ohm-cm)−1 per electron/cm2 up to at least 3×1014 electrons/cm2. Beyond 3×1015 electrons/cm2 the slope was approximately one tenth of the initial value. The reciprocal of the Hall coefficient decreased at first and then increased. Between 1×1013 and 5×1013 electrons/cm2 1/RH increases linearly from 3×10−5 to 6.3×10−5 coulomb/cm3. After irradiation, the samples showed no measurable conductivity changes during 14 hr at 78°K. After a day's anneal at 300°K the 78°K conductivity returned to its preirradiation value. N-type germanium was irradiated with 20-Mev electrons at room temperature. Conductivity measurements indicated that the sample became intrinsic and then p type. However, the detailed dependence of conductivity on radiation dosage did not agree with a calculation based on four energy levels introduced into the gap. Carrier lifetime changes were also observed.This publication has 5 references indexed in Scilit:
- Thermal and Radiation Annealing of GePhysical Review Letters, 1959
- Measurement of the galvanomagnetic effects in pure telluriumJournal of Physics and Chemistry of Solids, 1959
- Surface Effects in Electron-Irradiated Ge at 80°KPhysical Review B, 1958
- Radiation Damage in Ge and Si Detected by Carrier Lifetime Changes: Damage ThresholdsPhysical Review B, 1958
- Electron-Bombardment Damage in SiliconPhysical Review B, 1958