Characterization of deep levels in LEC GaAs crystals by the photoluminescence technique
- 28 February 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 116 (1-3) , 404-408
- https://doi.org/10.1016/0378-4363(83)90281-4
Abstract
No abstract availableKeywords
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