Fractional secondary ion yields of Be, Zn, Cr and Si in InP, GaInAs and Ga1−xAlxAs
- 1 April 1986
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 15 (1-6) , 180-182
- https://doi.org/10.1016/0168-583x(86)90279-x
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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