Three-dimensional "atomistic" simulation of discrete random dopant distribution effects in sub-0.1 μm MOSFET's
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Experimental Study Of Threshold Voltage Fluctuations Using An 8k MOSFET's ArrayPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- Effects of microscopic fluctuations in dopant distributions on MOSFET threshold voltageIEEE Transactions on Electron Devices, 1992
- Technology challenges for ultrasmall silicon MOSFET’sJournal of Vacuum Science and Technology, 1981
- Fundamental limitations in microelectronics—I. MOS technologySolid-State Electronics, 1972