Characterization of lateral dopant diffusion in silicides
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 245-248
- https://doi.org/10.1109/iedm.1990.237183
Abstract
The lateral diffusion of dopants in silicides has been studied using a sensitive Schottky barrier test structure that relies on changes in the I-V characteristics of silicide/silicon interfaces due to dopant diffusion from a doped silicide into silicon. The test structure has been used to determine the diffusivity of As and B in WSi/sub 2/ and TiSi/sub 2/. The diffusion process is modeled as a 1-D diffusion from a constant concentration dopant source. The diffusivity of B and As in WSi/sub 2/ is found to be 1.0*10/sup -3/ exp (-1.17/kT) cm/sup 2//s and 2.6 exp (-2.11/kT) cm/sup 2//s, respectively. The diffusivity of As in TiSi/sub 2/ is 4.8 exp (-2.13/kT) cm/sup 2//s. No measurable lateral diffusion of B in TiSi/sub 2/ has been observed.Keywords
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