Injection electroluminescence in phosphorous-ion-implanted ZnSe p-n junction diodes
- 1 March 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (3) , 1444-1446
- https://doi.org/10.1063/1.1663427
Abstract
Electroluminescence has been obtained from phosphorus‐implanted ZnSe p‐n junction diodes at room temperature. In forward bias, the diodes exhibit an electroluminescence spectrum similar to the red photoluminescence spectrum with a peak at 6300 Å giving an external quantum efficiency of 0.01%.This publication has 9 references indexed in Scilit:
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