Amorphization from Quenched High-Pressure Phase at Low Temperatures and High Pressures in Semiconductors

Publisher Website
Google Scholar
Abstract
X-ray diffraction for amorphous Si1-x Ge x (0.0≤x≤1.0) and crystalline GaSb has been measured at various pressures up to 13 GPa and temperatures down to 100 K using synchrotron radiation. Pressure-induced phase transitions to metallic phases and amorphizations were observed. The behavior of phase transitions strongly depends on paths in a pressure-temperature phase diagram. The high-pressure phase was quenched on release of pressure at low temperature. Amorphization from a quenched high-pressure phase occurred for a-Si1-x Ge x and GaSb when the temperature was elevated at low pressure. These results are discussed in connection with the pressure dependence of potential barriers for the phase transitions.

This publication has 0 references indexed in Scilit: