Statistical Properties of Disordered Semiconductors

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Abstract
Basic statistical considerations are shown to imply pronounced effects on many properties of materials having energy-band tails. For extrinsic cases a metallike temperture dependence of the Fermi energy occurs; in consequence, a method is proposed for directly measuring the density of states in the tail. For intrinsic amorphous semiconductors, severe limitations are found for the inference of a sharp mobility edge from temperature-dependent conductivity data.