Misfit dislocation characteristics in quarternary heterojunctions Ga1-xAlxAs1-yPy/GaAs analysed by synchrotron radiation white beam topography
- 1 June 1978
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 43 (5) , 628-636
- https://doi.org/10.1016/0022-0248(78)90052-0
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
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