Characterization of SiO2/Si with a novel scanning capacitance microscope combined with an atomic force microscope
- 1 June 1997
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 117-118, 166-170
- https://doi.org/10.1016/s0169-4332(97)80072-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Scanning Capacitace Microscope/Atomic Force Microscope/Scanning Tunneling Microscope Study of Ion-Implanted Silicon SurfacesJapanese Journal of Applied Physics, 1995
- Lateral dopant profiling with 200 nm resolution by scanning capacitance microscopyApplied Physics Letters, 1989
- Scanning capacitance microscopy on a 25 nm scaleApplied Physics Letters, 1989
- Scanning capacitance microscopyJournal of Physics E: Scientific Instruments, 1988
- Scanning capacitance microscopyJournal of Applied Physics, 1985
- Thermal Oxidation of Heavily Phosphorus‐Doped SiliconJournal of the Electrochemical Society, 1978