Contact area dependence of minority-carrier injection in Schottky barrier diodes
- 1 March 1974
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (3) , 1442-1443
- https://doi.org/10.1063/1.1663426
Abstract
A general theory of the Schottky barrier diode capable of incorporating geometrical effects is shown to predict the widely different minority‐carrier injection properties of planar and point contact metal‐semiconductor structures.This publication has 6 references indexed in Scilit:
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