Anderson Transition in a Strong Magnetic Field
- 10 August 1994
- journal article
- Published by IOP Publishing in Europhysics Letters
- Vol. 27 (5) , 389-394
- https://doi.org/10.1209/0295-5075/27/5/010
Abstract
No abstract availableThis publication has 40 references indexed in Scilit:
- Stuppet al. replyPhysical Review Letters, 1994
- Possible solution of the conductivity exponent puzzle for the metal-insulator transition in heavily doped uncompensated semiconductorsPhysical Review Letters, 1993
- Critical behavior of the zero-temperature conductivity in compensated silicon, Si:(P,B)Physical Review B, 1988
- Indication of universal behavior of Hall conductivity near the metal-insulator transition in disordered systemsPhysical Review B, 1987
- Fine Tuning of Metal-Insulator Transition in Al0.3Ga0.7As Using Persistent PhotoconductivityJournal of the Physics Society Japan, 1987
- Metal-insulator transition in a doped semiconductorPhysical Review B, 1983
- Measurements of conductivity near the metal-insulator critical pointPhysical Review B, 1983
- Tunneling and Transport Measurements at the Metal-Insulator Transition of Amorphous Nb: SiPhysical Review Letters, 1983
- Evidence for localization effects in compensated semiconductorsPhysical Review B, 1982
- Electron Tunneling Experiments on AmorphousPhysical Review Letters, 1981