Dependence of the critical temperature for the formation of charge density waves in 2H-NbSe₂upon impurity concentration

28 September 1976

journal article
Published by IOP Publishing in Journal of Physics C: Solid State Physics

Vol. 9 (18) , L489-L493
https://doi.org/10.1088/0022-3719/9/18/006

Abstract

NMR techniques have been used to determine the transition temperature for the onset of the charge density wave state in 2H-NbSe₂ as a function of the residual resistance ratio of the samples. Within the framework of the chosen model, an ultimate transition temperature of 43K is determined for a sample with infinite residual resistance ratio and a critical resistance ratio of 12 below which the charge density wave state does not exist.

Keywords

This publication has 8 references indexed in Scilit:

An electron diffraction evidence of charge density wave instability in 2H-NbSe2
Physics Letters A, 1976
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Solid State Communications, 1975
Heat capacity of 2HNbSe2 at the charge density wave transition
Physics Letters A, 1975
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Dependence of the critical temperature for the formation of charge density waves in 2H-NbSe2upon impurity concentration

Abstract

Keywords

Dependence of the critical temperature for the formation of charge density waves in 2H-NbSe₂upon impurity concentration