Measurement of radiative recombination coefficient and carrier leakage in 1.3 μm InGaAsP lasers with lightly doped active layers

9 December 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (25-26) , 1108-1110
https://doi.org/10.1049/el:19820756

Abstract

Carrier lifetime and spontaneous emission data for InGaAsP lasers with lightly doped active layers are used to measure the carrier-dependent radiative coefficient B(n) and the leakage current due to electron drift. The Auger recombination coefficient is less than 0.1 × 10⁻²⁸ cm⁶/s.

Keywords

CARRIER LIFETIME
CARRIER LEAKAGE MEASUREMENT
RADIATIVE RECOMBINATION COEFFICIENT MEASUREMENT
III-V SEMICONDUCTORS
AUGER RECOMBINATION COEFFICIENT
INGAASP LASERS
LIGHTLY DOPED ACTIVE LAYERS
ELECTRON DRIFT

This publication has 0 references indexed in Scilit: