A two-dimensional numerical model of the width direction of a MOSFET is used to simulate the surface potential and the subthreshold current of p-channel devices. Fully-recessed, semi-recessed, and nonrecessed oxide isolation structures with various transition angles as well as interface charge are modeled. The nonrecessed oxide structure is superior for reducing subthreshold current, in some cases more than 20 percent. The fully-recessed oxide with a 90° transition angle provides maximum device density, a planar surface, and ease of fabrication. Experimental results indicate that for the fully-recessed oxide structure the p-channel device with interface charge will show a threshold-voltage variation of only 12 percent with widths varying from 10 to 1.5 µm, and an increase in subthreshold current of an order of magnitude compared to a wide device.