Annihilation of Positrons in Electron‐Irradiated Silicon Crystals
- 1 September 1978
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 89 (1) , 69-75
- https://doi.org/10.1002/pssb.2220890108
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Defect annealing studies on metals by positron annihilation and electrical resitivity measurementsPhysical Review B, 1978
- Positron annihilation in n- and p-type, B- and P-doped silicon crystals of 100 and 111 orientationsPhysics Letters A, 1977
- Influence of defects and temperature on the annihilation of positrons in neutron-irradiated siliconPhysical Review B, 1976
- EPR Studies of Lattice Defects in SemiconductorsPublished by Springer Nature ,1976
- Positron escape from annihilation centers in electron-irradiated Si crystalsPhysics Letters A, 1975
- Positron studies of metalsPublished by Springer Nature ,1975
- Positron Annihilation in Neutron-Irradiated-Type SiliconPhysical Review B, 1973
- Positron lifetimes in proton-irradiated siliconSolid State Communications, 1973
- POSITRONFIT: A versatile program for analysing positron lifetime spectraComputer Physics Communications, 1972
- Positron annihilation and defects in metalsPhysics Letters A, 1969