Calculations on the Shape and Extent of Space Charge Regions in Semiconductor Surfaces
- 1 December 1958
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 29 (12) , 1627-1629
- https://doi.org/10.1063/1.1723012
Abstract
The shape and extent of space charge regions in semiconductor surfaces are briefly discussed. Curves describing the potential as a function of distance inside the semiconductor are obtained by numerical integration of the Poisson equation. The curves apply to all semiconductors. They show the effects of different resistivities and the increased depth of the space charge regions expected in pure III‐V compounds over those encountered in Ge and Si.This publication has 2 references indexed in Scilit:
- Physical Theory of Semiconductor SurfacesPhysical Review B, 1955
- Calculation of the Space Charge, Electric Field, and Free Carrier Concentration at the Surface of a SemiconductorJournal of Applied Physics, 1955