Origin of the difference in the open circuit voltage between p-i-n type and n-i-p type hydrogenated amorphous silicon solar cells

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Abstract
The origin of the difference in the open circuit voltage Voc between a p‐i‐n and n‐i‐p type hydrogenated amorphous silicon solar cells is discussed theoretically, considering the interaction of photogenerated free electrons and holes, i.e., the effect of a self‐field. It has been clarified that the self‐field aids the carrier collection in an n‐i‐p cell whereas it impedes the carrier collection in a p‐i‐n cell. This difference in the effect of the self‐field on the photovoltaic process causes the difference in Voc between these two type cells.