The Evaluation of Electrically Active Damage in Hot, Phosphorus Implantations in Silicon by Means of Hall-Effect Measurements
- 1 January 1971
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Measurements of hall-effect and sheet resistivity as a function of temperature on hot, phosphorous implants in siliconRadiation Effects, 1970
- TEMPERATURE DEPENDENCE OF R HS IN ALUMINUM-IMPLANTED LAYER IN n-TYPE SINGLE CRYSTAL SILICONApplied Physics Letters, 1969
- Implantation profiles of 32P channeled into silicon crystalsCanadian Journal of Physics, 1968
- Channeling of medium-mass ions through siliconCanadian Journal of Physics, 1968
- The range of heavy ions (0.1–1.5 MeV) in monocrystalline tungstenNuclear Instruments and Methods, 1965