Surface photovoltage monitoring of the Si-buried oxide interface charges

19 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 52-53
https://doi.org/10.1109/soi.1995.526456

Abstract

Shows that SPV can be employed for fast and reliable monitoring ofthe Si-BOX interfacial charges. Simulation ofthe 0.25 pm CMOS-SOI transistor indicated degradation ofthe subthreshold leakage when the charge density exceeded 2 * 10/sup 12/ cm-2. Further MOSFET miniaturization could lower the critical value of Q/sub Si-Box/ to the levels presently observed in SIMOX SOI wafers.

Keywords

MONITORING
SURFACE CLEANING
CAPACITANCE-VOLTAGE CHARACTERISTICS
HAFNIUM
CHARGE MEASUREMENT
WAFER BONDING
MOSFET CIRCUITS
SUBTHRESHOLD CURRENT
COLLISION MITIGATION
LABORATORIES

This publication has 1 reference indexed in Scilit:

Large-Signal Surface Photovoltage Studies with Germanium
Physical Review B, 1958