Monolithic integration of an InGaAs/GaAs/AlGaAs strained layer SQW LED and GaAs MESFET using epitaxial lift-off

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Abstract
The successful realisation of a fully electrically interconnected optical and electronic device using the epitaxial lift-off technique is reported. The OEIC consists of a high output power InGaAs/GaAs/AlGaAs strained QW LED and a GaAS MESFET driver. The surface emitting LED shows an external quantum efficiency of 1.7%. The output/input ratio of the LED-FET combination was 54 μWV−1 sr−1.