Preparation and properties of high-Tc Nb–Ge films
- 1 July 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (7) , 3009-3013
- https://doi.org/10.1063/1.1663717
Abstract
Using a previously reported low‐energy sputtering technique, Nb‐Ge films have been prepared with superconducting Tc's up to ∼23 K. High‐field, x‐ray, and annealing results are reported for these highest‐Tc films. A discussion of the critical parameters required to achieve the highest transition temperatures in the Nb–Ge system is given. Also further arguments in support of the theories that these highest Tc's are due to the formation of the stoichiometric Nb3Ge phase in the sputtered films are presented.This publication has 4 references indexed in Scilit:
- Superconductivity in Nb–Ge films above 22 KApplied Physics Letters, 1973
- Temperature dependence of upper critical field in Nb-Al-Ge-filmsPhysics Letters A, 1971
- SUPERCONDUCTIVITY OF NB 3 (AL, GE) ABOVE 20.5°KProceedings of the National Academy of Sciences, 1968
- Superconductivity ofGePhysical Review B, 1965