MOVPE grown Ga 0.6 In 0.4 Sb photodiodes for 2.55 μm detection
- 12 March 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (6) , 531-532
- https://doi.org/10.1049/el:19920335
Abstract
Photodiodes with a long-wavelength cutoff extending out to 2.9 μm have been fabricated from MOVPE-grown Ga0 6In0.4Sb homojunctions. These mesa devices without any passivation or antireflecting coating exhibit a peak efficiency as high as 43% at 2.60 μm.Keywords
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