Hot wire deposited hydrogenated amorphous silicon solar cells

Publisher Website
Google Scholar
Abstract
This paper details preliminary results obtained in incorporating low H content, high substrate temperature hot wire (HW) deposited amorphous silicon material into a substrate solar cell structure. By necessity, since the learning curve for this complete structure involves metal/n‐i/Schottky barrier structure optimization, a large part of the results are focused on this (partial) structure. We have found that the treatment of the top surface of the HW i layer during cooling is crucial to device performance. Without any particular attention paid to the treatment of this surface while the sample is cooling from its high deposition temperature, a significant amount of H diffuses out of the sample during the cooling process, particularly near the surface, resulting in devices with very poor photovoltaic properties. By designing a surface treatment to address this problem, we have been able to deposit HW Schottky structures with device characteristics as good as the best glow discharge devices produced in our laboratory. We present data concerning these surface treatments, and how they influence the H content at the i/Pd interface.

This publication has 0 references indexed in Scilit: