Transparent Pt Ohmic Contact on p-Type GaN with Low Resistivity Using (NH[sub 4])[sub 2]S[sub x] Treatment
Open Access
- 1 January 1999
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 3 (1) , 53-55
- https://doi.org/10.1149/1.1390956
Abstract
The contact resistivity of transparent contact on p‐type was drastically decreased from to by the surface treatments in sequence using aqua regia and solution. The aqua regia plays a role in removing the surface oxide formed on p‐type during epitaxial growth, and the protects the clean surface from the formation of native oxide during air exposure. The reduction of contact resistivity is due to direct contact of Pt to the clean surface of p‐type , via shift of the Fermi level position to an energy level near the valence band, resulting in the reduction of barrier height for holes at the interface of . ©2000 The Electrochemical SocietyKeywords
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