Fabrication of CuInSe2 single crystals using melt-growth techniques
- 28 February 1986
- journal article
- Published by Elsevier in Solar Cells
- Vol. 16, 17-26
- https://doi.org/10.1016/0379-6787(86)90072-4
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Influence of Intrinsic Defects on the Electrical Properties of CuInSe2Physica Status Solidi (a), 1984
- Two‐Phonon Absorption Spectra in CuInSe2Physica Status Solidi (b), 1981
- Impurity States in CuInSe2Crystal Research and Technology, 1981
- Growth, morphology and impurity characterisation of some I III IV2 sulphides and selenidesProgress in Crystal Growth and Characterization, 1980
- Electrical Properties of p- and n-Type CuInSe2Single CrystalsJapanese Journal of Applied Physics, 1979
- Ternary chalcopyrite compoundsProgress in Crystal Growth and Characterization, 1979
- Temperature dependence of the absorption edge in cuinse2Physica Status Solidi (b), 1977
- Radiative recombination in melt-grown and Cd-implanted CuInSe2Journal of Applied Physics, 1976
- Crystal data for CuInSe2Journal of Applied Crystallography, 1973
- Electronic Structure of AgInand CuInPhysical Review B, 1973