Deposition and Crystallisation Behaviour of Amorphous Silicon Thin Films Obtained by Pyrolysis of Disilane Gas at Very Low Pressure
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
High purity amorphous silicon layers were obtained by ultrahigh vacuum (millitorr range) chemical vapor deposition (UHVCVD) from disilane gas. The crystalline fraction of the films was monitored by in situ electrical conductance measurements performed during isothermal annealings. The experimental conductance curves were fitted with an analytical expression, from which the characteristic crystallisation time, tc, was extracted. Using the activation energy for the growth rate extracted from our previous work, we were able to determine the activation energy for the nucleation rate for the analysed-films. For the films including small crystallites we have obtained En ∼ 2.8 eV, compared to En ∼ 3.7 eV for the completely amorphous ones.Keywords
This publication has 24 references indexed in Scilit:
- Structure of As‐Deposited LPCVD Silicon Films at Low Deposition Temperatures and PressuresJournal of the Electrochemical Society, 1992
- Construction and operation of an ultrahigh vacuum chemical vapor deposition epitaxial reactor for growth of GexSi1−xJournal of Vacuum Science & Technology B, 1990
- Analysis of solid phase crystallization in amorphized polycrystalline Si films on quartz substratesJournal of Applied Physics, 1989
- Crystallization of LPCVD Silicon Films by Low Temperature AnnealingJournal of the Electrochemical Society, 1989
- Large grain polycrystalline silicon by low-temperature annealing of low-pressure chemical vapor deposited amorphous silicon filmsJournal of Applied Physics, 1988
- Low defect-density polycrystalline silicon for high performance thin film transistorsApplied Surface Science, 1987
- The Effect of Low Pressure on the Structure of LPCVD Polycrystalline Silicon FilmsJournal of the Electrochemical Society, 1987
- Structure and crystal growth of atmospheric and low-pressure chemical-vapor-deposited silicon filmsJournal of Applied Physics, 1986
- Growth and Physical Properties of LPCVD Polycrystalline Silicon FilmsJournal of the Electrochemical Society, 1984
- Crystallization of amorphous silicon films during low pressure chemical vapor depositionApplied Physics Letters, 1983