A method for the removal of fast surface states, slow states and fixed charge in various MIS structures is described. This radio-frequency (RF) annealing process is done in a 13.56 MHz capacitively-coupled plasma etcher/ stripper. This technique has proven to be more effective than the conventional thermal annealing process, and has been used to successfully eliminate undesirable radiation effects induced by E-beam, electron gun metallization, or reactive ion etching exposure in MIS structures. The temperature during the annealing process is estimated to be less than 340°C. Necessary conditions of the annealing process are detailed, and an annealing mechanism is postulated.