Epitaxial Deposition of Silicon by Pyrolysis of SiH4
- 1 April 1967
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 6 (4)
- https://doi.org/10.1143/jjap.6.550
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Silicon variable capacitance diodes with high voltage sensitivity by low temperature epitaxial growthIEEE Transactions on Electron Devices, 1966
- Oriented growth of semiconductors I. Orientations in gallium arsenide grown epitaxially on germaniumPhilosophical Magazine, 1965
- Perfection of Expitaxial Silicon Layers Grown by the Pyrolysis of SilanePhilosophical Magazine, 1964