Resonant modulation of single contact monolithic semiconductor lasers at millimeter wave frequencies

Abstract
Resonant modulation of a single contact semiconductor laser at the cavity roundtrip frequency of 40 GHz is demonstrated. Efficient mode coupling is obtained with a single contact device by utilizing the high attenuation of the millimeter‐wave modulation signal along the laser stripe. The properties and limitations of this technique are analyzed using a distributed circuit model of the laser.

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