Electronic States of Ni‐Silicides and Its Relation to Metal‐Silicide/Si Interfaces

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Abstract
Electronic states of Ni‐silicides ( , , and ) and potential barrier heights of Ni‐silicide/Si junctions were studied by nuclear magnetic resonance (NMR) and by capacitance‐voltage (C‐V) measurement, respectively. It was determined that the electronic state of silicon is metallic in all Ni‐silicides and that at the site of Si‐atom the 3s‐electron density with Fermi energy becomes larger with increasing Si concentration. From C‐V measurements, all of three Ni‐silicide/Si junctions showed almost the same barrier height of ∼0.7 eV. These and other experimental results are discussed, and a proposal is made on the nature of the Schottky barrier height at the transition‐metal‐silicide/Si interfaces.

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