Influence of the incorporation of germanium on the tail states in amorphous alloys semiconductors
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 114, 540-542
- https://doi.org/10.1016/0022-3093(89)90643-1
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Post-transit time-of-flight currents as a probe of the density of states in hydrogenated amorphous siliconPhysical Review B, 1989
- Electron-transport parameters and tail-state distribution in hydrogenated amorphous silicon obtained from position and tail-state matrix simulation of drift experimentsPhysical Review B, 1988
- Determination of the density of states of the conduction-band tail in hydrogenated amorphous siliconPhysical Review B, 1988
- A novel method for determining the gap-state profile and its application to amorphous Si1−xGex:H filmsJournal of Applied Physics, 1988
- A model for the electronic transport in hydrogenated amorphous siliconPhilosophical Magazine Part B, 1981