Energy gaps of ordered and disordered A15 ’’phases’’ in Nb3Ge measured by tunneling
- 1 November 1976
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (9) , 622-625
- https://doi.org/10.1063/1.89166
Abstract
In electron tunneling measurements into high‐Tc getter‐sputtered Nb3Ge films, two energy gaps are clearly identified. The larger, 2Δ=7.8 meV, we associate with well‐ordered A15 material. The smaller, 2Δ∼1.0 meV, we suggest indicates the presence of very disordered material, because we cannot identify any known phase of the NbGe system with this low gap, and because a most interesting ’’phase’’ of Nb3Ge, with 2Δ=0.86 meV and Tc=3.06 K, was isolated by sputtering from the same target onto a cold (100−200 °C) substrate.Keywords
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