Selective excitation luminescence and electronic Raman scattering study of the 78-meV acceptor in GaAs
- 15 April 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (8) , 793-795
- https://doi.org/10.1063/1.94888
Abstract
We observe for the first time two excited states of the 78-meV acceptor in liquid encapsulated Czochralski GaAs with excitation energies of 62.9 and 66.9 meV above the ground state, respectively. These levels were observed in two different samples using selective excitation luminescence and electronic Raman scattering. We conclude that these levels could correspond to transitions from the 1s2 ground state to the split 1s12s1 excited state of a double acceptor.Keywords
This publication has 11 references indexed in Scilit:
- Residual double acceptors in bulk GaAsApplied Physics Letters, 1983
- Evidence of intrinsic double acceptor in GaAsApplied Physics Letters, 1982
- Infrared absorption of the 78-meV acceptor in GaAsApplied Physics Letters, 1982
- Photoluminescence identification of ∼77-meV deep acceptor in GaAsJournal of Applied Physics, 1982
- Selective excitation luminescence in bulk-grown GaAsApplied Physics Letters, 1982
- Stoichiometry-controlled compensation in liquid encapsulated Czochralski GaAsApplied Physics Letters, 1982
- Two-phonon Raman scattering in GaAsJournal of Physics and Chemistry of Solids, 1977
- Cubic contributions to the spherical model of shallow acceptor statesPhysical Review B, 1974
- Spherical Model of Shallow Acceptor States in SemiconductorsPhysical Review B, 1973
- Splitting of the Ground State of the Neutral Mercury Double Acceptor in GermaniumPhysical Review Letters, 1966