Formation of buried CoSi2 by ion implantation
- 1 September 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 38 (1-4) , 207-216
- https://doi.org/10.1016/0169-4332(89)90540-0
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Microstructure of heteroepitaxial Si/CoSi2/Si formed by Co implantation into (100) and (111) SiApplied Physics Letters, 1989
- Study of CoSi2/Si strained layers grown by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1987
- Mesotaxy: Single-crystal growth of buried CoSi2 layersApplied Physics Letters, 1987
- Self-aligned silicides or metals for very large scale integrated circuit applicationsJournal of Vacuum Science & Technology B, 1986
- A self-aligned cobalt silicide technology using rapid thermal processingJournal of Vacuum Science & Technology B, 1986
- Formation of thin films of CoSi2: Nucleation and diffusion mechanismsThin Solid Films, 1985
- Algorithms for the rapid simulation of Rutherford backscattering spectraNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Kinetics of CoSi2 from evaporated siliconApplied Physics A, 1984
- Transition metals in siliconApplied Physics A, 1983
- Electrical Resistivity Study of Lattice Defects Introduced in Copper by 1.25-Mev Electron Irradiation at 80°KPhysical Review B, 1956