Monolithic integration of lateral field-effect rectifier with normally-off HEMT for GaN-on-Si switch-mode power supply converters
- 1 December 2008
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A lateral field-effect rectifier (L-FER) that can be fabricated with normally-off transistor on the same AlGaN/GaN HEMT with the same fabrication process has been demonstrated. The L-FER exhibits low turn-on voltage, low specific on-resistance and high reverse breakdown. A prototype of switch-mode dc-dc boost converter that features monolithically integrated L-FER and normally-off HEMT is demonstrated for the first time using industry-standard GaNon-Si epitaxial wafers to prove the feasibility of GaN power integrated technology.Keywords
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