Protection of n‐Si Photoanode against Photocorrosion in Photoelectrochemical Cell for Water Electrolysis

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Abstract
The photoelectrochemical behavior of n‐type Si electrode in aqueous solutions was investigated. Protection of the electrodes against photocorrosion was achieved by chemically depositing a thin film of manganese oxide on the surface. The electrodes have shown complete stability during oxygen evolution under continuous illumination of more than 650h. The electrodes have been characterized in terms of surface topography, surface analysis, and flatband potential using scanning electron microscopy, x‐ray photoelectron spectroscopy (XPS), and capacitance‐potential characteristics, respectively. Mn in the film is observed to be present in the +3 state. The XPS analysis of the electrode that has been producing oxygen shows that the photogenerated holes on the electrode surface oxidize water to oxygen and do not oxidize the Mn3+ to higher valence state. Mott‐Schottky plots have been used to determine the flatband potential of the electrode. They show that the flatband potential of the protected electrode shifts in the cathodic direction with an increase in the pH of the solution.

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