Temperature dependence of the barrier height in Al-(Al-oxide)-Al junctions, observed by photoelectric measurements
- 16 May 1971
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 5 (2) , K109-K112
- https://doi.org/10.1002/pssa.2210050235
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Experimental evidence for the temperature dependence of the barrier height in Al-Al2O3-metal tunneling junctionsPhysica Status Solidi (a), 1970
- Inelastic Electron Tunneling in Al-Al-Oxide-Metal SystemsPhysical Review B, 1969
- Investigation of Al2O3 film-thickness by tunnel emission and capacitance measurementsSolid State Communications, 1967
- Photoemission Studies on Thin Metal‐Insulator‐Metal SandwichesPhysica Status Solidi (b), 1967
- Potential Barrier Parameters in Thin-Film Al–Al2O3-Metal DiodesJournal of Applied Physics, 1966
- Hot-Electron Attenuation in ThinFilmsPhysical Review Letters, 1965
- Photocurrents Through Thin Films of Al2O3Journal of Applied Physics, 1965
- Photoemissive Determination of Barrier Shape in Tunnel JunctionsPhysical Review Letters, 1965
- The Growth of Barrier Oxide Films on AluminumJournal of the Electrochemical Society, 1959
- The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various TemperaturesPhysical Review B, 1931