Lasing characteristics under high temperature operationof 1.55 µm strained InGaAsP/InGaAlAs MQW laserwith InAlAs electron stopper layer
- 23 November 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (24) , 2105-2107
- https://doi.org/10.1049/el:19951458
Abstract
The authors have developed a 1.55 µm strained InGaAsP/InGaAlAs MQW laser with an InAlAs electron stopper layer. The device showed low threshold current and high maximum temperature. Superior lasing characteristics have been demonstrated through comparison with conventional strained MQW lasers.Keywords
This publication has 3 references indexed in Scilit:
- High temperature operation of AlGaInAs/InP lasersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Novel design of AlGaInAs-InP lasers operating at 1.3 μmIEEE Journal of Quantum Electronics, 1995
- Advanced 1.55 µm Quantum-Well GaInAlAs Laser Diodes with Enhanced PerformanceJapanese Journal of Applied Physics, 1994