Photoelectronic Analysis of High Resistivity Crystals: (a) GaAs, (b) Sb2S3

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Abstract
A series of photoelectronic measurements has been used to obtain information about the following basic properties of high resistivity crystals: (1) majority carrier lifetime, (2) band gap, (3) activation energy for dark conductivity, and (4) activation energies and densities of trapping centers for carriers. Such measurements have been made on representative high resistivity n‐type crystals of GaAs and Sb2S3. The results are reported here together because both crystals show evidence for trapping of photoexcited carriers by compensated donor centers of the same type as those which uncompensated give rise to the normal dark conductivity. Additional data on Sb2S3, together with other results on similar crystals, suggest that these same uncompensated donor centers may play an important role in the recombination process.

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