Spot size dependence of switching power for an optically bistable InSb element
- 1 August 1985
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (3) , 203-205
- https://doi.org/10.1063/1.96217
Abstract
The dependence of switching power upon input beam spot radius for an optically bistable InSb étalon has been measured. The results show that the irradiance required for switching increases as the spot radius is reduced. There is no evidence of any lower limit to the switching power, even for spot radii much less than the ambipolar diffusion length. Studies of the transmitted beam intensity profile in the near-field demonstrate the role of diffusion in our observations. The implications of our results for digital optical processing are briefly discussed.Keywords
This publication has 10 references indexed in Scilit:
- Carrier diffusion measurements in InSb by the angular dependence of degenerate four-wave mixingOptics Letters, 1985
- InSb devices: transphasors with high gain, bistable swtiches and sequential logic gatesPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1984
- Phase conjugation by degenerate four wave mixing in InSb with a cw CO laserOptics Communications, 1984
- Low power transverse optical bistability near bound excitons in cadmium sulfideApplied Physics Letters, 1984
- Use of a single nonlinear Fabry–Perot étalon as optical logic gatesApplied Physics Letters, 1984
- High gain signal amplification in an InSb transphasor at 77 KApplied Physics Letters, 1983
- Optical cross talk between nearby optical bistable devices on the same étalonOptics Letters, 1982
- Theory of nonlinear refraction near the band edge of a semiconductorProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1982
- Stability of nonlinear Fabry-Perot resonatorsOptics Communications, 1981
- Optical bistability in semiconductorsIEEE Journal of Quantum Electronics, 1981