Progress in high power SiC microwave MESFETs
- 20 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 321-324
- https://doi.org/10.1109/mwsym.1999.779484
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Monte Carlo calculations of the temperature- and field-dependent electron transport parameters for 4H-SiCJournal of Applied Physics, 1995
- 4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHzIEEE Electron Device Letters, 1994