Silicon solar cell with a novel low-resistance emitter structure
- 1 October 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (7) , 649-651
- https://doi.org/10.1063/1.93636
Abstract
A silicon solar cell with over 19% efficiency at 100 suns, AM1.5, 20 °C, incorporating a novel front contact geometry, has been demonstrated. The cell has one third of its frontal area covered with metal and grid line spacing of 82 μ, as measured along the silicon surface. It uses V-groove etching, angle-contact metal evaporation, and a cover glass to allow high fractional grid coverage with low obscuration, thereby minimizing emitter resistance losses at high concentrations.Keywords
This publication has 3 references indexed in Scilit:
- The fabrication and performance of organometallic vapor phase epitaxial AlxGa1-xAs/GaAs concentrator solar cellsSolar Cells, 1982
- The interdigitated back contact solar cell: A silicon solar cell for use in concentrated sunlightIEEE Transactions on Electron Devices, 1977
- On etching very narrow grooves in siliconApplied Physics Letters, 1975