Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors
- 7 January 2005
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (3) , 032103
- https://doi.org/10.1063/1.1852089
Abstract
We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystalfield-effect transistors(FETs). We find that, irrespective of the specific organic molecule and dielectric used, leakage current flowing through the gate insulator results in an irreversible degradation of the single-crystalFET performance. This degradation occurs even when the leakage current is several orders of magnitude smaller than the source-drain current. The experimental data indicate that a stable operation requires the leakage current to be smaller than 10 − 9 A ∕ cm 2 . Our results also suggest that gate leakage currents may determine the lifetime of thin-film transistors used in applications.Keywords
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