Hologram writing by the photorefractive effect with Gaussian beams at constant applied voltage
- 1 September 1976
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (9) , 4048-4051
- https://doi.org/10.1063/1.323233
Abstract
The problem of hologram writing with one-dimensional Gaussian beams incident on a finite crystal with finite dark conductivity is modelled for constant applied voltage and short transport length. Expressions are derived for the space-charge field during the initial linear and the final saturation stages plus a series solution covering the whole time development. It is shown that the ratio of light- to dark-carrier concentration and the ratio of crystal length to Gaussian beam width have important effects on the writing process.This publication has 8 references indexed in Scilit:
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