Effects of Zn doping on modulation bandwidth of 1.55 μm InGaAs/InGaAsP multiquantum well DFB lasers

24 June 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (13) , 1197-1198
https://doi.org/10.1049/el:19930800

Abstract

Experimental results are presented that confirm that Zn doping the active region of multiquantum well DFB lasers enhances their modulation bandwidth. This is achieved by reducing both the damping and low frequency rolloff associated with carrier transport. A maximum CW bandwidth of 17 GHz at 20°C is reported.

Keywords

MODULATION BANDWIDTH
1.55 MICRON
ACTIVE REGION
LOW FREQUENCY ROLLOFF
DAMPING
20 DEGC
INP SUBSTRATE
MULTIQUANTUM WELL DFB LASERS
17 GHZ
ZN DOPING
MAXIMUM CW BANDWIDTH
INGAAS-INGAASP:ZN

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