Fermi-liquid renormalization of the g-factor and effective mass in Si inversion layer

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Abstract
We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a broad range of carrier densities n=(1.1-50)x10^{11}cm^{-2}, which includes the vicinity of the metal-insulator transition (MIT). Using a novel technique of measuring the SdH oscillations in superimposed and independently controlled parallel and perpendicular magnetic fields, we determined the effective g*-factor and the effective mass m*. Both m* and g* increase gradually with decreasing density; near the MIT, g*m* exceeds its high-density value by a factor of ~ 3.5. The observed moderate increase of g* does not support the idea of ferromagnetic instability at the MIT.

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