Silicide resistors for integrated circuits

1 October 1971

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 59 (10) , 1425-1429
https://doi.org/10.1109/proc.1971.8449

Abstract

Thin-film resistors are useful in monolithic integrated circuits whenever high sheet resistance (ρs> 1 kΩ/sq) or radiation hardness are required. Silicide resistive films (MoSi2, CrSi2, and Si-Cr) deposited by dc sputtering have been shown to be compatible with monolithic circuit production end require no protective overlayer. Si-Cr films 200-300 Å thick have ρs, and temperature coefficients of resistance (TCR) ranging from about 1 kΩ/sq and +150 ppm/°C (CrSi2) to 20 kΩ/sq and -1400 ppm/°C (17 at % Cr). MoSi2is best suited for resistor applications requiring 100-200Ω/sq. MoSi2films are about 700 Å thick at 200 Ω/sq, compared to < 100 Å for 200-Ω/sq Ni-Cr, and their TCR is -125 ppm/°C. Typical stability for unprotected silicide resistors in TO-5 packages at 200°C, no load, is < ±3 percent during the first 200 h and < ± 0.5 percent during the next 2000 h. The films are stable during short term exposure to high temperatures as encountered during monolithic or hybrid circuit ceramic package sealing.

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