An explicit surface-potential-based MOSFET model for circuit simulation

This publication has 15 references indexed in Scilit:

• An improved MOSFET model for circuit simulation
  IEEE Transactions on Electron Devices, 1998
• A physical and scalable I-V model in BSIM3v3 for analog/digital circuit simulation
  IEEE Transactions on Electron Devices, 1997
• An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications
  Analog Integrated Circuits and Signal Processing, 1995
• Systematic distortion analysis for MOSFET integrators with use of a new MOSFET model
  IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, 1994
• MISNAN-a physically based continuous MOSFET model for CAD applications
  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1991
• A charge sheet capacitance model of short channel MOSFETs for SPICE
  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1991
• A physical parametric transistor model for CMOS circuit simulation
  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988
• Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's
  Solid-State Electronics, 1987
• A new approach to threshold voltage modelling of short-channel MOSFETS
  Solid-State Electronics, 1986
• Fully integrated active RC filters in MOS technology
  IEEE Journal of Solid-State Circuits, 1983